Simulation and Optimization of δ-doped AlInAs/InGaAs HEMT for High Frequency Applications
نویسندگان
چکیده
Simulation and Optimization of δ-doped AlInAs/InGaAs HEMT for High Frequency Applications Farhan Aziz, M.J. Siddiqui Department of Electronics and Communication Engg. BSACET, Mathura, U.P., India Department of Electronics Engg. Zakir Husain College of Engg. and Technology Aligarh Muslim University, Aligarh, U.P., India ____________________________________________________________________________________
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